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| ON Semiconductort One Watt Amplifier Transistor NPN Silicon MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg BDC01D 100 100 5.0 0.5 1.0 8.0 2.5 20 -55 to +150 Unit Vdc Vdc Vdc Adc Watts mW/C Watts mW/C C BDC01D 1 2 3 CASE 29-10, STYLE 14 TO-92 (TO-226AE) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 125 50 Unit C/W C/W 3 BASE COLLECTOR 2 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symb ol Min Max Unit 1 EMITTER OFF CHARACTERISTICS Collector-Emitter Voltage (IC = 10 mA, IB = 0) Collector Cutoff Current (VCB = 100 V, IE = 0) Emitter Cutoff Current (IC = 0, VEB = 5.0 V) V(BR)C EO 100 -- -- -- 0.1 100 Vdc mAdc nAdc ICBO IEBO ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) (IC = 500 mA, VCE = 2.0 V) Collector-Emitter Saturation Voltage(1) (IC = 1000 mA, IB = 100 mA) Collector-Emitter On Voltage(1) (IC = 1000 mA, VCE = 1.0 V) hFE 40 25 VCE(sat) VBE(on) -- -- 400 -- 0.7 1.2 Vdc Vdc -- DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product (IC = 200 mA, VCE = 5.0 V, f = 20 MHz) Output Capacitance (VCB = 10 V, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle 2.0%. (c) Semiconductor Components Industries, LLC, 2001 fT Cob 50 -- -- 30 MHz pF 1 March, 2001 - Rev. 1 Publication Order Number: BDC01D/D BDC01D 400 TJ = 125C hFE , DC CURRENT GAIN 200 25C -55C VCE = 1.0 V 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 Figure 1. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 0.6 0.4 0.2 0 0.05 IC = 10 mA 50 mA 100 mA 250 mA 500 mA V, VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 0 0.5 VCE(sat) @ IC/IB = 10 1.0 2.0 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 200 500 VBE(on) @ VCE = 1.0 V 0.1 0.2 0.5 2.0 5.0 1.0 IB, BASE CURRENT (mA) 10 20 50 Figure 2. Collector Saturation Region Figure 3. "On" Voltages http://onsemi.com 2 BDC01D VB, TEMPERATURE COEFFICIENT (mV/C) -0.8 -1.2 -1.6 -2.0 -2.4 VB for VBE C, CAPACITANCE (pF) 80 60 40 Cibo TJ = 25C 20 10 8.0 6.0 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 -2.8 0.5 1.0 2.0 5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA) 200 500 4.0 0.1 Figure 4. Base-Emitter Temperature Coefficient BANDWIDTH PRODUCT (MHz) Figure 5. Capacitance 300 IC, COLLECTOR CURRENT (mA) 200 VCE = 2.0 V TJ = 25C DUTY CYCLE 10% 2k 1k 500 200 100 50 20 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 10 1.0 TA = 25C TC = 25C 1.0 ms 100 s 1.0 s 100 70 50 dc dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSW05 MPSW06 2.0 5.0 10 20 60 80 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) f T, CURRENT-GAIN Figure 6. Current-Gain -- Bandwidth Product Figure 7. Active Region -- Safe Operating Area http://onsemi.com 3 BDC01D PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-10 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --- R P F L B SEATING PLANE K XX G H R 123 D J SECTION X-X NC N YLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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